4 μA/μm, and a high retention time of 105 ms at a high temperature of 358 K. In addition, it has been verified that a single cycle of 1T-DRAM operations consumes only 33.6 fJ of energy, which is smaller than for previously proposed 1T-DRAMs.A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). https://www.selleckchem.com/products/eg-011.html The juncap2 model is successfully combined with BSIM4 model and it is validated with measurement data. The model accurately predicts the leakage current characteristics for the entire bias region and temperature.In this paper, a 1T-DRAM based on the junctionless field-effect transistor (JLFET) with an ultrathin polycrystalline silicon layer was designed and investigated by using technology computer-aided design simulation (TCAD). The application of a negative voltage at the control gate results in the generation of holes in the storage region by the band-to-band tunneling (BTBT) effect. Memory characteristics such as sensing margin and retention time are affected by the doping concentration of the storage region, bias condition of the program, and length of the intrinsic region. In addition, the gate acts as a switch that controls the transfer characteristics while the control gate plays a role in retaining holes in the hold state. The device was optimized, considering various parameters such as the doping concentration of the storage region (Nstorage), intrinsic region length (Lint), and operation bias conditions to obtain a high sensing margin of 49.7 μA/μm and a long retention time of 2 s even at a high temperature of 358 K. The obtained retention time is almost 30 times longer than that predicted for modern DRAM cells by the International technology roadmap for semiconductors (ITRS).A capacitorless one-transistor dynamic random-access memory cell with a polysilicon body (poly-Si 1T-DRAM) has a cost-effective fabrication process and allows a three-dimensional stacked architecture that increases the integration density of memory cells. Also, since this device uses grain boundaries (GBs) as a storage region, it can be operated as a memory cell even in a thin body device. GBs are important to the memory characteristics of poly-Si 1T-DRAM because the amount of trapped charge in the GBs determines the memory's data state. In this paper, we report on a statistical analysis of the memory characteristics of poly-Si 1T-DRAM cells according to the number and location of GBs using TCAD simulation. As the number of GBs increases, the sensing margin and retention time of memory cells deteriorate due to increasing trapped electron charge. Also, "0" state current increases and memory performance degrades in cells where all GBs are adjacent to the source or drain junction side in a strong electric field. These results mean that in poly-Si 1T-DRAM design, the number and location of GBs in a channel should be considered for optimal memory performance.In this study, we report the self-nanostructured growth of 4,6-bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine (B3PyMPM), which is widely used as an electron transport layer for organic light-emitting diodes (OLEDs). B3PyMPM nanostructures were formed on the surface of a substrate using vacuum thermal evaporation, and parameters such as substrate rotation speed and evaporation angle were altered to study their effect on the growth of nanostructures. Moreover, it was proven that the growth of nanostructures was dependent on the underneath materials. This self-nanostructured growth of B3PyMPM would affect the outcoupling and the efficiency improvement of OLEDs.In this study, we report the effects of the substrate rotational speed on the morphological characteristics of lithium fluoride (LiF) during thermal evaporation. LiF is used as a typical material in a vacuum-level shift-based electron injection layer and can improve both the charge injection and light emission properties when inserted into the electrode/organic material interface of organic light-emitting diodes (OLEDs). In general OLED research, rotary evaporation is widely used to ensure uniformity. However, there are few reports regarding the effects of this rotary evaporation method on the morphological characteristics of the thin films. Therefore, in this study, we analyzed the effects of rotary variations on the morphological and electron injection characteristics during deposition. The root mean square roughness of the LiF thin film deposited on Alq? changed by up to 12.3%. Additionally, the driving voltage of the electron-only device showed a difference of 2.3 V at maximum and a change in the slope of the ohmic region was demonstrated. The morphological change in the LiF thin film based on the rotational speed of the substrate had a significant influence on the reaction at the electrode/organic material interface.We propose a passband-flattened frequency-tunable optical multiwavelength filter with a composite combination of waveplates, which is realized by harnessing a polarization-diversified loop structure. The proposed filter comprises a polarization beam splitter (PBS), two polarization-maintaining fiber (PMF) segments of equal length, an ordered waveplate combination (OWC) of a half-wave plate (HWP) and a quarter-wave plate (QWP) before the first PMF segment, and an OWC of a QWP and an HWP before the second PMF segment. The second PMF segment is butt-coupled to one port of the PBS so that its slow axis is oriented at 22.5° for the horizontal axis of the PBS. Based on the filter transmittance derived through the Jones calculus, we found the orientation angle (OA) sets of the four waveplates, which could induce an extra phase shift Φ from 0° to 360° in the passband-flattened transmittance function. From the transmission spectra calculated at the eight selected OA sets, which caused Φ to increase from 0° to 315° by steps of 45°, it was confirmed that the passband-flattened multiwavelength spectrum can be continuously tuned by properly controlling the OAs. This indicates continuous wavelength tunability based on composite OWCs. Then, this theoretical prediction was verified by experimental demonstration.